LeapZipBlog: Steve Blade's blog: GaN RF Devices Market Volume Forecast and Value Chain Analysis 2017 to 2026

GaN RF Devices Market Volume Forecast and Value Chain Analysis 2017 to 2026

August 20, 2019 by Steve Blade  

According to Fact.MR’s new report, the global market for GaN RF devices is poised to register a splendid rise through the forecast period (2017-2026). Over US$ 1,600 Mn worth of GaN RF devices are estimated to be sold around the world by 2026-end.

The global GaN RF devices market will continue to be driven by GaN’s wide bandgap property that encourages innovation, growing demand for GaN RF devices in aerospace, defense & military verticals, and successful implementation of GaN technology in RF-power electronics. This report,
compiled by Fact.MR, provides in-depth analysis of the global GaN RF devices market for the forecast period 2017-2026, offering key insights on the growth prospects of the market.

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Table of Content

1. Global Outlook

2. Global GaN RF Devices Market - Executive Summary

3. Global GaN RF Devices Market Overview
3.1. Introduction
       3.1.1. Global GaN RF Devices Market Taxonomy
       3.1.2. Global GaN RF Devices Market Definition
3.2. Global GaN RF Devices Market Size (US$ Mn) and Forecast, 2012-2026
       3.2.1. Global GaN RF Devices Market Y-o-Y Growth
3.3. Global GaN RF Devices Market Dynamics
3.4. SiC and GaN-on-Si Device Market Comparison
3.5. Semiconductor Industry Segmentation
3.6. Power Discretes and Modules Competitive Comparison
3.7. WBG Material Cost and Wafer Size Comparison
3.8. Application for GaN Devices in RF Electronic System
3.9. Key Participants Market Presence (Intensity Map) By Region

4. Global GaN RF Devices Market Analysis and Forecast 2012-2026 
4.1. Global GaN RF Devices Market Size and Forecast By Product Type, 2012-2026
       4.1.1. Module Market Size and Forecast, 2012-2026
              4.1.1.1. Revenue (US$ Mn) Comparison, By Region
              4.1.1.2. Market Share Comparison, By Region
              4.1.1.3. Y-o-Y growth Comparison, By Region
       4.1.2. Discrete Market Size and Forecast, 2012-2026
              4.1.2.1. Revenue (US$ Mn) Comparison, By Region
              4.1.2.2. Market Share Comparison, By Region
              4.1.2.3. Y-o-Y growth Comparison, By Region

To be Continue..................

APEJ to Remain Dominant Market for GaN RF Devices

The market for GaN RF devices is expected to witness the fastest expansion in Asia-Pacific excluding Japan (APEJ) through 2026. APEJ will also remain the dominant market for GaN RF devices, followed by Japan and North America. The markets in these regions is primarily being driven by increasing GaN RF devices application in defense sector, and large-scale growth of 4G networks. Presence of numerous GaN RF device manufacturers in APEJ is the main reason for its dominance in the global market.

Owing to large-scale 4G network deployment, the need for base stations and high-power transistors is increasing, thereby creating robust demand for wireless infrastructure. In addition, growing adoption of tablets, computers and smartphones, emergence of 5G network, and proliferation of IoT will further create growth avenues for wireless infrastructure. Wireless infrastructure will remain the largest application of GaN RF devices, followed by PV inverter.

Key market players comprised in the report are Infineon, Renesas, Panasonic, Mitsubishi Electric, Toshiba, Hitachi, STMicroelectronics, Bosch, Sumitomo Electric, and Raytheon.

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