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Gate Driver IC Market Volume Forecast and Value Chain Analysis 2017-2025

December 2, 2019 by Jason Lee  

Facto Market Insights has recently added a new study to its broad research portfolio, which is titled as Gate Driver IC Market Volume Forecast and Value Chain Analysis 2017-2025 provides an in-depth analysis of the Gate Driver IC with the forecast of market size and growth. The report studies the casing heads market worldwide, especially in North America, China, Europe, Southeast Asia, Japan and India, with production, size, growth, revenue, consumption, import and export in these regions.

A gate driver IC is an integrated circuit chip, which is used in controlling power dissipation, current flow, heat flow, and initiates smooth switching actions in high-power transistor gates, such as MOSFET and IGBT. It can be provided either on-chip or as a discrete module and consists of a level shifter in combination with an amplifier.

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As every transistor requires a particular gate voltage to switch on, the gate capacitor must be charged to at least the required gate voltage for the transistor to be switched on. This voltage is controlled by its driver IC. Similarly, the heat dissipation current through the transistors can be controlled by the use of driver ICs.

North America contributes a smaller amount in gate driver IC market, however, the development in the energy & power industry and adoption of advanced technology boosts the market growth. Moreover, the use of power MOSFET in consumer electronics and electric vehicles is expected to drive the market growth during the forecast period. In addition, surge in adoption of power modules is a major factor that contributes toward the growth of the market. Gate driver ICs are widely used in number of electronic applications in North America, which is expected to further drive the growth of the market.

The global gate driver IC market is analyzed by transistor type, semiconductor material, by mode of attachment, isolation technique, application, and region. On the basis of transistor type, the market is categorized into MOSFET and IGBT. By semiconductor material, it is divided into SIC and GAN. Depending on mode of attachment, it is bifurcated into on-chip and discrete. Based on isolation technique, it is segregated into magnetic isolation, capacitive isolation, and optical isolation. The applications covered in the study include residential, industrial, and commercial. Region wise, the market is analyzed across North America, Europe, Asia-Pacific, and LAMEA along with their prominent countries.

The key players profiled in the report include Infineon Technologies, NXP Semiconductors, Renesas Electronics, STMicroelectronics, Toshiba, Texas Instrument, ROHM Semiconductors, Mitsubishi Electric Corporation, ON Semiconductor, and Semtech.
These key players have adopted strategies such as product portfolio expansion, mergers & acquisitions, agreements, geographical expansion, and collaborations to enhance their market penetration.

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KEY BENEFITS FOR STAKEHOLDERS
• This study includes the analytical depiction of the global gate driver IC along with the current trends and future estimations to determine the imminent investment pockets.
• The report presents information regarding the key drivers, restraints, and opportunities.
• The current market is quantitatively analyzed from 2017 to 2025 to highlight the financial competency of the industry.
• Porter’s five forces analysis illustrates the potency of the buyers and suppliers in the industry.

Chapter: 1: INTRODUCTION

1.1. Report description
1.2. Key benefits for stakeholders
1.3. Key market segments
1.4. Research methodology

1.4.1. Primary research
1.4.2. Secondary research
1.4.3. Analyst tools and models

Chapter: 2: EXECUTIVE SUMMARY

2.1. CXO perspective

Chapter: 3: MARKET OVERVIEW

3.1. Market definition and scope
3.2. Key findings

3.2.1. Top impacting factors
3.2.2. Top investment pockets
3.2.3. Top winning strategies

3.3. Porter’s five forces analysis
3.4. Market share analysis (2017)
3.5. Market dynamics

3.5.1. Drivers

3.5.1.1. Growth in adoption of smart home and smart grid technologies
3.5.1.2. Increase in need for high voltage devices

3.5.2. Restraint

3.5.2.1. Design complexities of gate driver ICs

3.5.3. Opportunities

3.5.3.1. Rapid electrification of automobiles
3.5.3.2. Surge in power transistors in various renewable energy system

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